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Proceedings Paper

Effect of gamma irradiation on room-temperature SWIR HgCdTe photodiodes
Author(s): Xinwen Hu; Xiangyang Li; Huiqin Lu; Jun Zhao; Haimei Gong; Jiaxiong Fang
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Paper Abstract

Planar n+-on-p SWIR Hg1-xCdxTe(x equals 0.577 approximately 0.669) photodiodes passivated with ZnS were irradiated by Co60 gamma source. The room temperature current-voltage characteristics of the photodiodes were carried out following the irradiation. And response spectrum, capacitance-voltage and noise spectrum of the devices were measured respectively before and after 1.0Mrads gamma irradiation. The results are found that the RT SWIR HgCdTe photodiodes are extremely hard to gamma irradiation with no perceivable deterioration in the device performance even upon irradiation of up to 1.0Mrads.

Paper Details

Date Published: 11 August 1998
PDF: 5 pages
Proc. SPIE 3553, Detectors, Focal Plane Arrays, and Imaging Devices II, (11 August 1998); doi: 10.1117/12.318060
Show Author Affiliations
Xinwen Hu, Shanghai Institute of Technical Physics (China)
Xiangyang Li, Shanghai Institute of Technical Physics (China)
Huiqin Lu, Shanghai Institute of Technical Physics (China)
Jun Zhao, Shanghai Institute of Technical Physics (United States)
Haimei Gong, Shanghai Institute of Technical Physics (China)
Jiaxiong Fang, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 3553:
Detectors, Focal Plane Arrays, and Imaging Devices II
Pingzhi Liang; Marc Wigdor; William G. D. Frederick, Editor(s)

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