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Proceedings Paper

Defects in HgCdTe crystals grown by SSR technique
Author(s): Yue Wang; Quanbao Li; Qingling Han; Bingwen Song; Wanqi Jie; Yaohe Zhou
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Paper Abstract

HgCdTe is a very important material for IR detector. The solid state recrystallization (SSR) is a very useful method to prepare HgCdTe single crystal. The defects in as-grown HgCdTe crystals grown by SSR method are introduced, the relationship between cause of resulting in these defects and crystal growth process is discussed simply in this paper. The research results have shown: if raw material purity is raised, stoichiometry is suitable and quench process is improved, the defects in HgCdTe crystals can be reduced and the quality of as-grown HgCdTe crystals can be improved.

Paper Details

Date Published: 11 August 1998
PDF: 8 pages
Proc. SPIE 3553, Detectors, Focal Plane Arrays, and Imaging Devices II, (11 August 1998); doi: 10.1117/12.318058
Show Author Affiliations
Yue Wang, Kunming Institute of Physics (China)
Quanbao Li, Kunming Institute of Physics (China)
Qingling Han, Kunming Institute of Physics (China)
Bingwen Song, Kunming Institute of Physics (China)
Wanqi Jie, Northwest Polytechnical Univ. (China)
Yaohe Zhou, Northwest Polytechnical Univ. (China)

Published in SPIE Proceedings Vol. 3553:
Detectors, Focal Plane Arrays, and Imaging Devices II
Pingzhi Liang; Marc Wigdor; William G. D. Frederick, Editor(s)

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