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Proceedings Paper

Deep finlike AlGaAs nanostructure fabricated by CAIBE
Author(s): Sheng Li Wu; Lijun Wang; Richard C. Tiberio; Seng Tiong Ho
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Paper Abstract

We show that very narrow fin-like periodic nanostructure with 0.1 micrometer width, 1 micrometer depth, and a few microns length can be fabricated on AlGaAs using Chemically-Assisted- Ion-Beam-Etching with oxidized AlGaAs as negative mask. This technique may have applications to nanoscale devices fabrication.

Paper Details

Date Published: 12 August 1998
PDF: 4 pages
Proc. SPIE 3551, Integrated Optoelectronics II, (12 August 1998); doi: 10.1117/12.318000
Show Author Affiliations
Sheng Li Wu, Changchun Institute of Physics (China)
Lijun Wang, Changchun Institute of Physics (China)
Richard C. Tiberio, Cornell Univ. (United States)
Seng Tiong Ho, Northwestern Univ. (United States)


Published in SPIE Proceedings Vol. 3551:
Integrated Optoelectronics II
BingKun Zhou; Ray T. Chen, Editor(s)

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