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Proceedings Paper

Photoluminescence measurement on erbium-doped silicon
Author(s): Hongbing Lei; Qingqing Yang; Haiyan Ou; Qiming Wang
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Paper Abstract

Erbium-implanted silicones were treated by lamp-heating rapid thermal annealing (RTA). Two types of erbium-related photoluminescence spectra appear under different anneal temperatures. 750 degrees Celsius annealing optimizes the luminescence intensity, which does not change with anneal time. Exciton-mediated energy transfer model in erbium-doped silicon was presented. The emission intensity is related to optical active erbium concentration, lifetime of excited Er3+ ion and spontaneous emission time. The thermal quenching of the erbium luminescence in Si is caused by thermal ionization of erbium-bound exciton complex and nonradiative energy backtransfer processes, which correspond to the activation energy of 6.6 meV and 47.4 meV respectively.

Paper Details

Date Published: 12 August 1998
PDF: 6 pages
Proc. SPIE 3551, Integrated Optoelectronics II, (12 August 1998); doi: 10.1117/12.317999
Show Author Affiliations
Hongbing Lei, Institute of Semiconductors (China)
Qingqing Yang, Institute of Semiconductors (China)
Haiyan Ou, Institute of Semiconductors (China)
Qiming Wang, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 3551:
Integrated Optoelectronics II
BingKun Zhou; Ray T. Chen, Editor(s)

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