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Proceedings Paper

SPER and characteristics of Si1-yCy alloys
Author(s): Zhuo Yu; Jinzhong Yu; Buwen Cheng; Zhenlin Lei; Daizong Li; Qiming Wang; Junwu Liang
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Paper Abstract

Si1-yCy alloys with carbon composition of 0.5 at% were successfully grown on n-Si(100) substrate by solid phase epitaxy recrystallization. The result was presented in this paper. With the help of the SiO2 capping layer, rather uniform carbon profile in amorphous Si layer was obtained by dual-energy implantation. Since ion-flow was small and implantation time was long enough, the emergency of (beta) -SiC was avoided and the dynamic annealing effect was depressed. The pre-amorphization of the Si substrate increased the fraction of the substitutions carbon and the two-step annealing reduced point defects. As a result, Si1-yCy alloys with high quality was recrystallized on Si substrate.

Paper Details

Date Published: 12 August 1998
PDF: 5 pages
Proc. SPIE 3551, Integrated Optoelectronics II, (12 August 1998); doi: 10.1117/12.317996
Show Author Affiliations
Zhuo Yu, Institute of Semiconductors (China)
Jinzhong Yu, Institute of Semiconductors (China)
Buwen Cheng, Institute of Semiconductors (China)
Zhenlin Lei, Institute of Semiconductors (China)
Daizong Li, Institute of Semiconductors (China)
Qiming Wang, Institute of Semiconductors (China)
Junwu Liang, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 3551:
Integrated Optoelectronics II
BingKun Zhou; Ray T. Chen, Editor(s)

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