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Proceedings Paper

Preparation and photoluminescence of nc-Si/SiO2 MQW
Author(s): Buwen Cheng; Jinzhong Yu; Zhuo Yu; Zhenlin Lei; Daizong Li; Qiming Wang
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Paper Abstract

The deposition rate and refractive index for a-Si(amorphous silicon) and SiO2 grown by PECVD were studied under different pressure, power and proportion of reactant source gases. a-Si/SiO2 MQW(multi-quantum well) with high quality was deposited under suitable conditions, in which the thickness of the a-Si layers is several nanometers. The sample of a-Si/SiO2 MQW was crystallized by laser annealing. Because of the confinement of the SiO2 layers, crystalline grains were formed during the a-Si layers were being crystallized. The size of the crystalline grains were not more than the thickness of the a-Si layers. The a-Si layers were crystallized to be nanometer crystalline silicon (nc-Si), therefore, nc-Si/SiO2 MQW was formed. For the a-Si/SiO2 MQW with 4.0 nm a-Si wells separated by 5 nm SiO2 barriers, most of the a-Si were crystallized to silicon grains after laser annealing, and the size of the grains is 3.8 nm. Strong photoluminescence with three peaks from the nc-Si/SiO2 MQW was detected at 10 K. The wavelength of the peaks were 810 nm, 825 nm and 845 nm, respectively.

Paper Details

Date Published: 12 August 1998
PDF: 5 pages
Proc. SPIE 3551, Integrated Optoelectronics II, (12 August 1998); doi: 10.1117/12.317995
Show Author Affiliations
Buwen Cheng, Institute of Semiconductors (China)
Jinzhong Yu, Institute of Semiconductors (China)
Zhuo Yu, Institute of Semiconductors (China)
Zhenlin Lei, Institute of Semiconductors (China)
Daizong Li, Institute of Semiconductors (China)
Qiming Wang, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 3551:
Integrated Optoelectronics II
BingKun Zhou; Ray T. Chen, Editor(s)

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