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Proceedings Paper

GaP/Si heterostructures grown by GS-MBE
Author(s): Jinzhong Yu; Buwen Cheng; Zhuo Yu; Qiming Wang
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Paper Abstract

GaP/Si is a promoting heterostructure for Si-based optoelectronic devices since lattice constants of GaP and Si are so closed that they can match with each other. GaP was successfully grow on (100) Si subtracts by Gas-Source Molecular Beam Epitaxy (GS-MBE) in the study. The GaP/Si heterostructure was characterized by X-ray double crystal diffraction, Auger electron spectrograph, X-ray photonic spectrograph and photoluminescence (PL) measurements. The results showed that the epitaxial GaP layers are single crystalline, in which a (parallel) and a (perpendicular) are 0.54322 and 0.54625 nm, respectively. The peaks in PL spectra of GaP epitaxial layer grown on Si are 650, 627 and 640 nm, respectively. The study demonstrated that GaP/Si is a kind of lattice matched heterostructures and will be a promoting materials for future integrated photonics.

Paper Details

Date Published: 12 August 1998
PDF: 4 pages
Proc. SPIE 3551, Integrated Optoelectronics II, (12 August 1998); doi: 10.1117/12.317986
Show Author Affiliations
Jinzhong Yu, Institute of Semiconductors (China)
Buwen Cheng, Institute of Semiconductors (China)
Zhuo Yu, Institute of Semiconductors (China)
Qiming Wang, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 3551:
Integrated Optoelectronics II
BingKun Zhou; Ray T. Chen, Editor(s)

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