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Proceedings Paper

High-power superluminescent diodes
Author(s): Yi Qu; Xin Gao; Baoshun Zhang; Li Wang; Xingde Zhang; Guotong Du
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Paper Abstract

A high power superluminescent diode (SLD) is developed on the basis of the terraced substrate inner laser diodes. The device is made of the characteristic of LPE of crystal on the non- planar substrate. The device's output power before assembled is 7 mW under operating current 150 mA. The wavelength is about 860 nm. The half width of the spectrum is 23 nm. The device is coupled with fiber (NA equals 0.23, D equals 50 micrometer). The coupling efficiency is about 30%. The pigtail fiber maximum output power is 2 mW.

Paper Details

Date Published: 12 August 1998
PDF: 4 pages
Proc. SPIE 3551, Integrated Optoelectronics II, (12 August 1998); doi: 10.1117/12.317977
Show Author Affiliations
Yi Qu, Changchun Institute of Optics and Fine Mechanics (China)
Xin Gao, Changchun Institute of Optics and Fine Mechanics (China)
Baoshun Zhang, Changchun Institute of Optics and Fine Mechanics (China)
Li Wang, Changchun Institute of Optics and Fine Mechanics (China)
Xingde Zhang, Changchun Institute of Optics and Fine Mechanics (China)
Guotong Du, Jilin Univ. (China)


Published in SPIE Proceedings Vol. 3551:
Integrated Optoelectronics II
BingKun Zhou; Ray T. Chen, Editor(s)

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