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Proceedings Paper

Dynamics of defect formation in annealed InP
Author(s): Yujie Han; Xunlang Liu; Jinghua Jiao; Lanying Lin
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Paper Abstract

Dynamics of formation of defects in the annealed nominally undoped semi-insulating InP obtained by high pressure, high temperature annealing of high purity materials is proposed. Incorporated hydrogen passivates vacancy at indium site from annihilation forming fully hydrogenated indium vacancy which dissociates leaving large lattice relaxation behind, deep donors, mainly larger complexes involving phosphorus at indium site and isolated hydrogen defects are created in nominally undoped InP after annealing. Also created are acceptor levels such as vacancy at indium site. Carrier charge compensation mechanism in nominally undoped InP upon annealing at high temperature is given. Microscopic models of hydrogen related defects are given. Structural, electronic and vibrational properties of LVMs related to hydrogen as well as their temperature effect are discussed.

Paper Details

Date Published: 12 August 1998
PDF: 4 pages
Proc. SPIE 3551, Integrated Optoelectronics II, (12 August 1998); doi: 10.1117/12.317975
Show Author Affiliations
Yujie Han, Institute of Semiconductors (Canada)
Xunlang Liu, Institute of Semiconductors (China)
Jinghua Jiao, Institute of Semiconductors (China)
Lanying Lin, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 3551:
Integrated Optoelectronics II
BingKun Zhou; Ray T. Chen, Editor(s)

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