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Proceedings Paper

Optical modulation in ZnSe-ZnS multiple quantum wells
Author(s): Dali Liu; Gongyu Li; Junqing Fan; Jiuling Lin; Xiwu Fan
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Paper Abstract

In this paper, the fabrication of a ZnSe-ZnS Multiple Quantum Well (MQWs) with 100 periods of 10 nm ZnSe well and 10 nm ZnS barrier and measurement of its modulating property was reported. The ZnSe-ZnS MQWs are most interesting material and its applications were discussed.

Paper Details

Date Published: 12 August 1998
PDF: 3 pages
Proc. SPIE 3551, Integrated Optoelectronics II, (12 August 1998); doi: 10.1117/12.317969
Show Author Affiliations
Dali Liu, Changchun Institute of Physics (China)
Gongyu Li, Changchun Institute of Physics (China)
Junqing Fan, Changchun Institute of Physics (China)
Jiuling Lin, Changchun Institute of Physics (China)
Xiwu Fan, Changchun Institute of Physics (China)


Published in SPIE Proceedings Vol. 3551:
Integrated Optoelectronics II
BingKun Zhou; Ray T. Chen, Editor(s)

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