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Proceedings Paper

Nature of iron in InP: an FTIR study
Author(s): Yujie Han; Xunlang Liu; Jinghua Jiao; Lanying Lin
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Paper Abstract

Fe is still the commonly used dopant to fabricate semi- insulting (SI) InP, a key material for high-speed electronic and optoelectronic devices. High resolved absorption spectra of the internal d-d shell transitions at Fe2+ in InP and the related phonon sidebands and a series of iron related absorption lines are presented. Detailed infrared absorption study of the characteristic spectra of four zero-phonon lines (ZPLs), which are attributed to transitions within the 5D ground state of Fe2+ (3d6) on the indium site in a tetrahedral crystal field of phosphorus atoms and their temperature effects are given.

Paper Details

Date Published: 12 August 1998
PDF: 4 pages
Proc. SPIE 3551, Integrated Optoelectronics II, (12 August 1998); doi: 10.1117/12.317964
Show Author Affiliations
Yujie Han, Institute of Semiconductors (Canada)
Xunlang Liu, Institute of Semiconductors (China)
Jinghua Jiao, Institute of Semiconductors (China)
Lanying Lin, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 3551:
Integrated Optoelectronics II
BingKun Zhou; Ray T. Chen, Editor(s)

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