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Proceedings Paper

Electroluminescent diode with nanocrystalline Si active layer prepared by pulsed-laser ablation in inert gas
Author(s): Takehito Yoshida; Yuka Yamada; Takaaki Orii
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Paper Abstract

We report on an electroluminescent (EL) diode with novel active layers of silicon (Si) nanocrystallites. The Si nanocrystallite active layer was prepared by pulsed laser ablation (PLA) in an ambient of reduced pressure inert gas. The structure of the EL diodes was semitransparent platinum (Pt) electrode/Si nanocrystallite layer/p-type Si/Pt electrode. We have observed visible spectra of not only photoluminescence (PL) around 2.07 eV, but also EL around 1.66 eV at room temperature. The EL diodes initially showed a rectifying behavior which degraded after current stresses. Furthermore, we have found that the EL diodes showed strong nonlinear dependence of EL intensity on current density. A possible mechanism of the EL diode emission is impact ionization by minority hot carriers injected through the surface oxide layers and the successive radiative recombination.

Paper Details

Date Published: 15 August 1998
PDF: 8 pages
Proc. SPIE 3550, Laser Processing of Materials and Industrial Applications II, (15 August 1998); doi: 10.1117/12.317944
Show Author Affiliations
Takehito Yoshida, Matsushita Research Institute Tokyo, Inc. (Japan)
Yuka Yamada, Matsushita Research Institute Tokyo, Inc. (Japan)
Takaaki Orii, Univ. of Tsukuba (Japan)


Published in SPIE Proceedings Vol. 3550:
Laser Processing of Materials and Industrial Applications II
ShuShen Deng; S. C. Wang, Editor(s)

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