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Proceedings Paper

Carbon nitride thin films deposited by nitrogen-ion-assisted laser ablation of graphite
Author(s): ZhongMin Ren; Yongfeng Lu; H. Q. Ni; Z. F. He; Daniel S. H. Chan; Tohsiew Low; K. R. P. Gamani; G. X. Chen; Kebin Li
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Paper Abstract

Carbon nitride thin films were deposited on silicon wafers by pulsed KrF Excimer (wavelength 248 nm, duration 23 ns) ablation of graphite. Different excimer fluences and pressures of the nitrogen atmosphere were used in order to achieve a high nitrogen content in the deposited thin films. In another case, a Kaufmann-type ion source was used to produce a nitrogen ion beam to assist the deposition process. X-ray photoelectron spectroscopes (XPS) were used to identify the binding structure and the content of the nitrogen species in the deposited thin films. The thin films deposited in nitrogen atmosphere had N/C ratio of 0.42, whilst those deposited with assistance of nitrogen ion beam bombardment had N/C equals 0.43. The dependence of the optical parameters of the deposited films, the refractive n and extinction coefficient k, were studied by Ellipsometry.

Paper Details

Date Published: 15 August 1998
PDF: 9 pages
Proc. SPIE 3550, Laser Processing of Materials and Industrial Applications II, (15 August 1998); doi: 10.1117/12.317936
Show Author Affiliations
ZhongMin Ren, National Univ. of Singapore (Singapore)
Yongfeng Lu, National Univ. of Singapore (United States)
H. Q. Ni, National Univ. of Singapore (Singapore)
Z. F. He, National Univ. of Singapore (Singapore)
Daniel S. H. Chan, National Univ. of Singapore (Singapore)
Tohsiew Low, National Univ. of Singapore (Singapore)
K. R. P. Gamani, National Univ. of Singapore (Singapore)
G. X. Chen, National Univ. of Singapore (Singapore)
Kebin Li, Institute of Materials Research and Engineering (Singapore)


Published in SPIE Proceedings Vol. 3550:
Laser Processing of Materials and Industrial Applications II
ShuShen Deng; S. C. Wang, Editor(s)

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