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Proceedings Paper

Deposition of boron-carbon-nitrogen ternary thin films by ion-beam-assisted excimer ablation of B4C target
Author(s): ZhongMin Ren; Yongfeng Lu; H. Q. Ni; Z. F. He; Daniel S. H. Chan; Tohsiew Low; K. R. P. Gamani; G. X. Chen; Kebin Li
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Paper Abstract

Boron-Carbon-Nitrogen thin films were deposited by laser ablation of B4C target under nitrogen ion-beam bombardment. The deposited thin films were set for X-ray photoelectron spectroscopy (XPS) and ellipsometry measurements. The results showed that in the ternary thin films, boron, carbon and nitrogen species were chemically bound to each other instead of simle mixtures. The B-C bonds were broken by the introduced energetic nitrogen ions and, subsequently, C-N and B-N bonds can be formed. The ellipsometry measurement gave the optical band gap of 0.48 eV for the thin films deposited under 50 eV nitrogen ion beam bombardment. According to the analyses, the nitrogen ion beam energy should be lower than 100 eV in most cases.

Paper Details

Date Published: 15 August 1998
PDF: 8 pages
Proc. SPIE 3550, Laser Processing of Materials and Industrial Applications II, (15 August 1998); doi: 10.1117/12.317935
Show Author Affiliations
ZhongMin Ren, National Univ. of Singapore (Singapore)
Yongfeng Lu, National Univ. of Singapore (United States)
H. Q. Ni, National Univ. of Singapore (Singapore)
Z. F. He, National Univ. of Singapore (Singapore)
Daniel S. H. Chan, National Univ. of Singapore (Singapore)
Tohsiew Low, National Univ. of Singapore (Singapore)
K. R. P. Gamani, National Univ. of Singapore (Singapore)
G. X. Chen, National Univ. of Singapore (Singapore)
Kebin Li, Institute of Materials Research and Engineering (Singapore)

Published in SPIE Proceedings Vol. 3550:
Laser Processing of Materials and Industrial Applications II
ShuShen Deng; S. C. Wang, Editor(s)

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