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Proceedings Paper

Self-guiding effects in semiconductor waveguide amplifiers
Author(s): Carl Kutsche; Patrick LiKamWa; John P. Loehr; Ron Kaspi
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Paper Abstract

An active double heterostructure diode structure is employed as a nonlinear medium to demonstrate soliton waveguiding effects. It was observed that the nonlinearities due to reverse bandfilling in active semiconductor amplifiers give rise to a spectral region where self-focusing takes place for photon energies corresponding to the peak of the gain. By monitoring the mode-profile at the output of the slab waveguide as a function of wavelength, a district narrowing of the output beam lateral dimension was observed and the beam profile appeared to stay stable for a range of input intensities. The slab waveguide was 650 micrometer long and each of the contact pads for electrical carrier injection was 60 micrometer wide. The experiments showed that the lateral dimension of the near field profile output beam changed from a FWHM width of 32 micrometer to 5.5 micrometer as the wavelength of the laser was tuned into the optimum range for self-focusing nonlinearities. This corresponds to a peak nonlinear coefficient of n2 equals 2.8 X 10-10 cm2/watt.

Paper Details

Date Published: 31 July 1998
PDF: 8 pages
Proc. SPIE 3384, Photonic Processing Technology and Applications II, (31 July 1998); doi: 10.1117/12.317656
Show Author Affiliations
Carl Kutsche, CREOL/Univ. of Central Florida (United States)
Patrick LiKamWa, CREOL/Univ. of Central Florida (United States)
John P. Loehr, Air Force Research Lab. (United States)
Ron Kaspi, Air Force Research Lab. (United States)


Published in SPIE Proceedings Vol. 3384:
Photonic Processing Technology and Applications II
Andrew R. Pirich; Michael A. Parker, Editor(s)

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