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Proceedings Paper

Forward-tunneling current voltage characteristics of HgCdTe p-on-n photodiodes
Author(s): Xiangyang Li; Jun Zhao; Huiqin Lu; Jiaxiong Fang; Yueyuan Xia
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Paper Abstract

Current-voltage characteristics of narrow-gap HgCdTe p-on-n photodiodes at different temperatures have been investigated. Forward tunneling current is seen in a certain forward bias region. A constant-current mode was also used to identify the trap-assistant tunneling, and the results show this forward tunneling current influences the zero bias resistance. Ideality factors, calculated from current-voltage experimental data, show a peak in the intermediate forward bias region. The height of peak in ideality factor decreases as the temperature increases. This peak is thought due to the multi-step tunneling current.

Paper Details

Date Published: 22 July 1998
PDF: 7 pages
Proc. SPIE 3379, Infrared Detectors and Focal Plane Arrays V, (22 July 1998); doi: 10.1117/12.317629
Show Author Affiliations
Xiangyang Li, Shanghai Institute of Technical Physics (China)
Jun Zhao, Shanghai Institute of Technical Physics (United States)
Huiqin Lu, Shanghai Institute of Technical Physics (China)
Jiaxiong Fang, Shanghai Institute of Technical Physics (China)
Yueyuan Xia, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 3379:
Infrared Detectors and Focal Plane Arrays V
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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