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Proceedings Paper

128x128 hybrid FPAs using MBE HgCdTe films on GaAs substrates
Author(s): Dmitrii G. Esaev; Anatoly G. Klimenko; A. I. Kozlov; I. V. Marchishin; Victor N. Ovsyuk; N. Kh. Talipov; T. I. Zakhariash; Vladimir V. Vasilyev; Yuri G. Sidorov; Sergey A. Dvoretsky
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Paper Abstract

The technology was developed and 128 X 128 LWIR FPA's based on HgCdTe epitaxial layers MBE-grown on GaAs substrates with cutoff wavelength (lambda) c equals 8 micrometer and 13 micrometer was fabricated. The photosensing layer HgCdTe was graded-gap layer with the higher content of Cd to boundaries of a layer. The manufactured LWIR FPA's had NETD 32 mK and 17 mK for (lambda) c equals 8 micrometer and 13 micrometer, correspondingly, at 295 K background and 80 K operation temperatures.

Paper Details

Date Published: 22 July 1998
PDF: 7 pages
Proc. SPIE 3379, Infrared Detectors and Focal Plane Arrays V, (22 July 1998); doi: 10.1117/12.317628
Show Author Affiliations
Dmitrii G. Esaev, Institute of Semiconductor Physics (United States)
Anatoly G. Klimenko, Institute of Semiconductor Physics (Russia)
A. I. Kozlov, Institute of Semiconductor Physics (Russia)
I. V. Marchishin, Institute of Semiconductor Physics (Russia)
Victor N. Ovsyuk, Institute of Semiconductor Physics (Russia)
N. Kh. Talipov, Institute of Semiconductor Physics (Russia)
T. I. Zakhariash, Institute of Semiconductor Physics (Russia)
Vladimir V. Vasilyev, Institute of Semiconductor Physics (Russia)
Yuri G. Sidorov, Institute of Semiconductor Physics (Russia)
Sergey A. Dvoretsky, Institute of Semiconductor Physics (Russia)


Published in SPIE Proceedings Vol. 3379:
Infrared Detectors and Focal Plane Arrays V
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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