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Proceedings Paper

256x256 HgCdTe MWIR array grown on Ge substrates
Author(s): Jean-Paul Zanatta; N. Luchier; Patrick Audebert; P. Demars; Jean-Paul Chamonal; Michel Ravetto; Michel Wolny
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Paper Abstract

A 256 X 256 IRCMOS array with a 35 micron pitch operating at 77 K in the MWIR range, has been developed using HgCdTe and CdTe layers grown by Molecular Beam Epitaxy (MBE) on a germanium (Ge) heterosubstrate. The CdTe(211)B layer is first grown on a 2 inch diameter (211) oriented Ge wafer with a smooth surface morphology and good crystalline quality. The HgCdTe(211)B layer is also grown by M.B.E. on this CdTe/Ge heterosubstrate with the same quality. The material characteristics are detailed. The 256 X 256 photodiode array is made using the standard LETI/LIR planar n-on-p ion implanted technology. At 80 K, photodiodes exhibited an RoA figure of merit higher than 106 (Omega) cm2 for a cut- off wavelength of 4.8 micrometer. An NEDT of 6 mK at 80 K was also obtained on the IRCMOS. The electro-optical characteristics of the component are presented and we show that the 256 X 256 component performances using HgCdTe grown on Ge heterosubstrate are comparable for MWIR applications to those obtained on 256 X 256 component using HgCdTe grown on CdZnTe homosubstrate.

Paper Details

Date Published: 22 July 1998
PDF: 8 pages
Proc. SPIE 3379, Infrared Detectors and Focal Plane Arrays V, (22 July 1998); doi: 10.1117/12.317627
Show Author Affiliations
Jean-Paul Zanatta, LETI/CEA (France)
N. Luchier, LETI/CEA (France)
Patrick Audebert, LETI/CEA (France)
P. Demars, LETI/CEA (France)
Jean-Paul Chamonal, LETI/CEA (France)
Michel Ravetto, LETI/CEA (France)
Michel Wolny, LETI/CEA (France)


Published in SPIE Proceedings Vol. 3379:
Infrared Detectors and Focal Plane Arrays V
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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