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Proceedings Paper

640x480 MCT 3- to 5-μm snapshot focal plane array
Author(s): Patrick Audebert; Dominique Giotta; Eric Mottin; Philippe Rambaud; Francois Marion
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Paper Abstract

A 640 X 480 snapshot IRCMOS array with 25 micron pitch operating in the 3 - 5 microns range was fabricated and an image demonstrated at the Infrared Laboratory (LIR). The readout circuit with 2 pC charge handling capacity was designed and processed with a 1.2 micrometer design rules standard CMOS technology. Photovoltaic (PV) detectors were achieved by ion implantation in liquid phase epitaxy MCT layers and interconnected by indium bumps on the readout circuit. A description of the component is given and the main electro-optical characteristics are presented. The pixel operability is greater than 99.8% and a NEDT of 15 mK was measured at half dynamics. Excellent imagery has been obtained with this component operating at 77 K and f/2 optics.

Paper Details

Date Published: 22 July 1998
PDF: 9 pages
Proc. SPIE 3379, Infrared Detectors and Focal Plane Arrays V, (22 July 1998); doi: 10.1117/12.317626
Show Author Affiliations
Patrick Audebert, LETI/CEA (France)
Dominique Giotta, LETI/CEA (France)
Eric Mottin, LETI/CEA (France)
Philippe Rambaud, LETI/CEA (France)
Francois Marion, LETI/CEA (France)


Published in SPIE Proceedings Vol. 3379:
Infrared Detectors and Focal Plane Arrays V
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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