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Proceedings Paper

Comparison of intersubband GaAs/AlGaAs multiple quantum well infrared photodetectors on GaAs and GaAs-on-Si substrates
Author(s): Deepak K. Sengupta; Sarath D. Gunapala; Thomas George; Sumith V. Bandara; C.-N. Chang-Chien; Rosa Leon; S. Kayali; Haochung Kuo; Wei-Chiao W. Fang; Hui Chun Liu; Gregory E. Stillman
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Paper Abstract

We have successfully fabricated intersubband GaAs/AlGaAs quantum well infrared photodetectors grown on GaAs-on-Si substrate and evaluated their structural, electrical, and optical characteristics. We have found that the performance is comparable to a similar detector structure grown on a semi- insulating GaAs substrate. The results are promising for applications in the important 8 - 12 micrometer atmospheric window.

Paper Details

Date Published: 22 July 1998
PDF: 13 pages
Proc. SPIE 3379, Infrared Detectors and Focal Plane Arrays V, (22 July 1998); doi: 10.1117/12.317609
Show Author Affiliations
Deepak K. Sengupta, Jet Propulsion Lab. (United States)
Sarath D. Gunapala, Jet Propulsion Lab. (United States)
Thomas George, Jet Propulsion Lab. (United States)
Sumith V. Bandara, Jet Propulsion Lab. (United States)
C.-N. Chang-Chien, Jet Propulsion Lab. (United States)
Rosa Leon, Jet Propulsion Lab. (United States)
S. Kayali, Jet Propulsion Lab. (United States)
Haochung Kuo, Univ. of Illinois/Urbana-Champaign (United States)
Wei-Chiao W. Fang, Univ. of Illinois/Urbana-Champaign (United States)
Hui Chun Liu, National Research Council Canada (Canada)
Gregory E. Stillman, Univ. of Illinois/Urbana-Champaign (United States)


Published in SPIE Proceedings Vol. 3379:
Infrared Detectors and Focal Plane Arrays V
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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