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Proceedings Paper

10- to 16-um broadband quantum well infrared photodetector
Author(s): Sumith V. Bandara; Sarath D. Gunapala; John K. Liu; Edward M. Luong; Jason M. Mumolo; Winn Hong; Deepak K. Sengupta; M. J. McKelvey
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Paper Abstract

A broad-band infrared detector, sensitive over a 10 - 16 micrometer spectral range, based on GaAs/AlxGa1-xAs quantum wells grown by molecular beam epitaxy, has been demonstrated. Wavelength broadening of (Delta) (lambda) /(lambda) p approximately 42% is observed to be about a 400% increase compared to a typical bound-to- quasibound quantum well infrared photodetector (QWIP). In this device structure, which is different from typical QWIP device structures, two different gain mechanisms associated with photocurrent electrons and dark current electrons were observed and explained. Even with broader response, D* approximately 1 X 1010 cm(root)Hz/W at T equals 55 K is comparable to regular QWIPs with similar cutoff wavelengths.

Paper Details

Date Published: 22 July 1998
PDF: 6 pages
Proc. SPIE 3379, Infrared Detectors and Focal Plane Arrays V, (22 July 1998); doi: 10.1117/12.317607
Show Author Affiliations
Sumith V. Bandara, Jet Propulsion Lab. (United States)
Sarath D. Gunapala, Jet Propulsion Lab. (United States)
John K. Liu, Jet Propulsion Lab. (United States)
Edward M. Luong, Jet Propulsion Lab. (United States)
Jason M. Mumolo, Jet Propulsion Lab. (United States)
Winn Hong, Jet Propulsion Lab. (United States)
Deepak K. Sengupta, Jet Propulsion Lab. (United States)
M. J. McKelvey, Jet Propulsion Lab. (United States)

Published in SPIE Proceedings Vol. 3379:
Infrared Detectors and Focal Plane Arrays V
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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