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Proceedings Paper

LETI/LIR's amorphous silicon uncooled microbolometer development
Author(s): Jean-Luc Tissot; Frederic Rothan; Corrinne Vedel; Michel Vilain; Jean-Jacques Yon
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Paper Abstract

Today, a large number of uncooled infrared detector developments are under progress due to the availability of silicon technology that enables realization of low cost 2D IR arrays. LETI/LIR, which has been involved in this field for a few years, has chosen resistive amorphous silicon as thermometer for its uncooled microbolometer development. After a first phase dedicated to acquisition of the most important detector parameters in order to help the modeling and technological development, an IRCMOS laboratory model (256 X 64 with a pitch of 50 micrometer) was realized and characterized. It was shown that NETD of 90 mK at f/1, 25 Hz and 300 K background can be obtained with high thermal insulation (1.2 107 K/W).

Paper Details

Date Published: 22 July 1998
PDF: 6 pages
Proc. SPIE 3379, Infrared Detectors and Focal Plane Arrays V, (22 July 1998); doi: 10.1117/12.317580
Show Author Affiliations
Jean-Luc Tissot, LETI/CEA (France)
Frederic Rothan, LETI/CEA (France)
Corrinne Vedel, LETI/CEA (France)
Michel Vilain, LETI/CEA (France)
Jean-Jacques Yon, LETI/CEA (France)

Published in SPIE Proceedings Vol. 3379:
Infrared Detectors and Focal Plane Arrays V
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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