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Proceedings Paper

Development of SIS mixers for 1 THz
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Paper Abstract

SIS heterodyne mixer technology based on niobium tunnel junctions has now been pushed to frequencies over 1 THz, clearly demonstrating that the SIS junctions are capable of mixing at frequencies up to twice the energy gap frequency (4(Delta) /h). However, the performance degrades rapidly above the gap frequency of niobium (2(Delta) /h approximately equals 700 GHz) due to substantial ohmic losses in the on-chip tuning circuit. To solve this problem, the tuning circuit should be fabricated using a superconducting film with a larger energy gap, such as NbN; unfortunately, NbN films often have a substantial excess surface resistance in the submillimeter band. In contrast, the SIS mixer measurements we present in this paper indicate that the losses for NbTiN thin films can be quite low.

Paper Details

Date Published: 31 July 1998
PDF: 10 pages
Proc. SPIE 3357, Advanced Technology MMW, Radio, and Terahertz Telescopes, (31 July 1998); doi: 10.1117/12.317386
Show Author Affiliations
Jonas Zmuidzinas, California Institute of Technology (United States)
Jacob W. Kooi, California Institute of Technology (United States)
Jonathan Kawamura, California Institute of Technology (United States)
Goutam Chattopadhyay, California Institute of Technology (United States)
Bruce Bumble, Jet Propulsion Lab. (United States)
Henry G. LeDuc, Jet Propulsion Lab. (United States)
Jeffry A. Stern, Jet Propulsion Lab. (United States)


Published in SPIE Proceedings Vol. 3357:
Advanced Technology MMW, Radio, and Terahertz Telescopes
Thomas G. Phillips, Editor(s)

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