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Proceedings Paper

Terahertz photomixing in low-temperature-grown GaAs
Author(s): Elliott R. Brown; Simon Verghese; K. Alexander McIntosh
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Paper Abstract

Low-temperature-grown (LTG) GaAs offers the combination of sub-picosecond photocarrier lifetime and high breakdown electric field (greater than 5 X 105 V/cm), and is grown in epitaxial films having excellent quality for microelectronic fabrication. A THz photoconductive mixer (photomixer) is formed on these films by patterning low- capacitance planar electrodes coupled to a coplanar antenna. The photomixer is conveniently pumped by two frequency-offset diode-laser beams focused on the exposed GaAs area between the electrodes. This paper summarizes the operational principles of the photomixer in contrast to a competing technique based on coherent three-wave photonic mixing. It then reviews different configurations of the photomixer as a laboratory tunable source for chemistry and metrology, and addresses some of the challenges in applying the photomixer as a local oscillator in portable spectroscopic and radiometric receivers.

Paper Details

Date Published: 31 July 1998
PDF: 11 pages
Proc. SPIE 3357, Advanced Technology MMW, Radio, and Terahertz Telescopes, (31 July 1998); doi: 10.1117/12.317346
Show Author Affiliations
Elliott R. Brown, MIT Lincoln Lab. (United States)
Simon Verghese, Massachusetts Institute of Technology (United States)
K. Alexander McIntosh, MIT Lincoln Lab. (United States)

Published in SPIE Proceedings Vol. 3357:
Advanced Technology MMW, Radio, and Terahertz Telescopes
Thomas G. Phillips, Editor(s)

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