Share Email Print

Proceedings Paper

Heterojunction field effect transistors (HJFETs) for a readout circuit of a cryogenically cooled far-infrared detector
Author(s): Iwao Hosako; Kenichi Okumura; Yukari Yamashita-Yui; Makoto Akiba; Norihisa Hiromoto
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Deep cryogenic field effect transistors (FETs) which are able to operate under liquid helium temperatures have significant advantages over conventional cryogenic Silicon- Junction-FETs or Si-metal-oxide-semiconductor-FETs as readout circuits of a far-IR focal plane array detector: simple operation, simple system structures, and large transconductance. We report the testing of an InGaAs-channel heterojunction field effect transistor (HJFET) operating at 4.2 K designed for a readout circuit of a cryogenically cooled far-IR detector. In this report, we present current- voltage characteristics, transconductance, low-frequency noise (LFN) characteristics, and the influence of the gate leakage current on the LFN characteristics of the HJFET. Input-referred noise voltage as low as a few hundred nanovolts at 1 Hz was measured for the HJFET with a 100 X 100 micrometers 2 gate area. We discuss further possibilities for the fabrication of HJFETs with an extremely small input current of less than 10-15 A.

Paper Details

Date Published: 21 August 1998
PDF: 8 pages
Proc. SPIE 3354, Infrared Astronomical Instrumentation, (21 August 1998); doi: 10.1117/12.317310
Show Author Affiliations
Iwao Hosako, Communications Research Lab. (Japan)
Kenichi Okumura, Communications Research Lab. (Japan)
Yukari Yamashita-Yui, Communications Research Lab. (Japan)
Makoto Akiba, Communications Research Lab. (Japan)
Norihisa Hiromoto, Communications Research Lab. (Japan)

Published in SPIE Proceedings Vol. 3354:
Infrared Astronomical Instrumentation
Albert M. Fowler, Editor(s)

© SPIE. Terms of Use
Back to Top