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Proceedings Paper

Heterojunction field effect transistors (HJFETs) for a readout circuit of a cryogenically cooled far-infrared detector
Author(s): Iwao Hosako; Kenichi Okumura; Yukari Yamashita-Yui; Makoto Akiba; Norihisa Hiromoto
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Paper Abstract

Deep cryogenic field effect transistors (FETs) which are able to operate under liquid helium temperatures have significant advantages over conventional cryogenic Silicon- Junction-FETs or Si-metal-oxide-semiconductor-FETs as readout circuits of a far-IR focal plane array detector: simple operation, simple system structures, and large transconductance. We report the testing of an InGaAs-channel heterojunction field effect transistor (HJFET) operating at 4.2 K designed for a readout circuit of a cryogenically cooled far-IR detector. In this report, we present current- voltage characteristics, transconductance, low-frequency noise (LFN) characteristics, and the influence of the gate leakage current on the LFN characteristics of the HJFET. Input-referred noise voltage as low as a few hundred nanovolts at 1 Hz was measured for the HJFET with a 100 X 100 micrometers 2 gate area. We discuss further possibilities for the fabrication of HJFETs with an extremely small input current of less than 10-15 A.

Paper Details

Date Published: 21 August 1998
PDF: 8 pages
Proc. SPIE 3354, Infrared Astronomical Instrumentation, (21 August 1998); doi: 10.1117/12.317310
Show Author Affiliations
Iwao Hosako, Communications Research Lab. (Japan)
Kenichi Okumura, Communications Research Lab. (Japan)
Yukari Yamashita-Yui, Communications Research Lab. (Japan)
Makoto Akiba, Communications Research Lab. (Japan)
Norihisa Hiromoto, Communications Research Lab. (Japan)


Published in SPIE Proceedings Vol. 3354:
Infrared Astronomical Instrumentation
Albert M. Fowler, Editor(s)

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