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Proceedings Paper

GaAs homojunction far-infrared detectors for astronomy applications
Author(s): A. G. Unil Perera; W. Z. Shen; M. H. Francombe; Mark A. Shure; Hui Chun Liu; Margaret Buchanan; William J. Schaff
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Paper Abstract

A high performance, bias tunable, p-GaAs homojunction interfacial work function internal photoemission far-IR (FIR) detector has been demonstrated. A responsivity of 3.10 +/- 0.05 A/W, a quantum efficiency of 12.5 percent, and a detectivity D* of 5.9 X 1010 cm (root) Hz/W, were obtained at 4.2K, for cutoff wavelengths form 80 to 100 micrometers . The bias dependences of quantum efficiency, detectivity, and cutoff wavelength have been measured and are well explained by the theoretical models. The cutoff wavelength is modeled by a modified high density theory, and the quantum efficiency is predicted by scaling the free carrier absorption coefficient linearly with the doping concentration. The effect of the number of layers on detector performance and the uniformity of the detectors have been discussed. A comparison with Ge:GA photoconductive detectors suggests that a similar or even better performance may be obtainable.

Paper Details

Date Published: 21 August 1998
PDF: 9 pages
Proc. SPIE 3354, Infrared Astronomical Instrumentation, (21 August 1998); doi: 10.1117/12.317293
Show Author Affiliations
A. G. Unil Perera, Georgia State Univ. (United States)
W. Z. Shen, Georgia State Univ. (United States)
M. H. Francombe, Georgia State Univ. (United States)
Mark A. Shure, Georgia State Univ. (United States)
Hui Chun Liu, National Research Council of Canada (Canada)
Margaret Buchanan, National Research Council of Canada (Canada)
William J. Schaff, Cornell Univ. (United States)

Published in SPIE Proceedings Vol. 3354:
Infrared Astronomical Instrumentation
Albert M. Fowler, Editor(s)

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