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Proceedings Paper

Modeling of diffused quantum well vertical-cavity surface-emitting lasers
Author(s): Siu Fung Yu
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Paper Abstract

A comprehensive numerical model for investigating the thermal, electrical and optical characteristics of vertical cavity surface emitting lasers with a diffused quantum wells structure is presented. In general, this model performs a self-consistent calculation of quasi 3D distribution of temperature, voltage and optical field. The quasi 2D diffusion and the recombination of carrier concentration inside the quantum well active layer are also introduced into the model. In particular, this model includes the calculation of the quasi 3D ion-implantation profile. In addition, the influence of impurity induced compositional disordering on the optical gain and refractive index of the quantum wells active layer is also taken into consideration. Using this model, the steady state characteristics of diffused quantum wells vertical cavity surface emitting lasers are studied theoretically. It is shown that significant improvement of stable single-mode operation can be obtained using diffused quantum wells structure.

Paper Details

Date Published: 7 July 1998
PDF: 8 pages
Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); doi: 10.1117/12.316737
Show Author Affiliations
Siu Fung Yu, Univ. of Hong Kong (Hong Kong)


Published in SPIE Proceedings Vol. 3283:
Physics and Simulation of Optoelectronic Devices VI
Marek Osinski; Peter Blood; Akira Ishibashi, Editor(s)

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