Share Email Print
cover

Proceedings Paper

Temperature sensitivity of threshold current density of a quantum dot laser
Author(s): Levon V. Asryan; Robert A. Suris
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Detailed theoretical analysis of the temperature dependence of threshold current density of a semiconductor quantum dot (QD) laser, jth, is given. Temperature dependences of the components of jth associated with the radiative recombination in QDs and in the optical confinement layer (OCL) are calculated. Violation of the charge neutrality in QDs is shown to give rise to the slight temperature dependence of the current density component associated with the recombination in QDs. The temperature is calculated (as a function of the parameters of the structure) at which the components of jth become equal to each other. Temperature dependences of the optimum surface density of QDs and the optimum thickness of the OCL, minimizing jth, are obtained. The characteristic temperature of QD laser, T0, is calculated considering carrier recombination in the OCL (barrier regions) and violation of the charge neutrality in QDs. The inclusion of violation of the charge neutrality is shown to be critical for the correct calculation of T0. The characteristic temperature is shown to fall off profoundly with increasing temperature. A drastic decrease in T0 is shown to occur in passing from temperature conditions wherein jth is controlled by radiative recombination in QDs to temperature conditions wherein jth is controlled by radiative recombination in the OCL. The dependences of T0 on the root mean square of relative QD size fluctuations, total losses and surface density of QDs are obtained.

Paper Details

Date Published: 7 July 1998
PDF: 12 pages
Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); doi: 10.1117/12.316735
Show Author Affiliations
Levon V. Asryan, A. F. Ioffe Physical-Technical Institute (United States)
Robert A. Suris, A. F. Ioffe Physical-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 3283:
Physics and Simulation of Optoelectronic Devices VI
Marek Osinski; Peter Blood; Akira Ishibashi, Editor(s)

© SPIE. Terms of Use
Back to Top