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Proceedings Paper

Nanoscale silicon for electroluminescent devices
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Paper Abstract

Although porous silicon has received the most attention over the last 5 years, other structures containing Si nanocrystallites have recently been shown to emit strong luminescence at room temperature. This presentation reviews the state-of-the-art in the preparation and properties of silicon quantum dot structures, and their use in electroluminescent devices. The materials science and the structural, chemical, electrical, and optical properties of both porous silicon and recrystallized silicon superlattices are discussed. The fabrication of light-emitting devices consisting of these two types of nanoscale silicon materials is then described. Finally, the present and projected stability, efficiency, and speed of these LEDS is reviewed and their integration with silicon microelectronic driver circuits demonstrated.

Paper Details

Date Published: 7 July 1998
PDF: 15 pages
Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); doi: 10.1117/12.316733
Show Author Affiliations
Philippe M. Fauchet, Univ. of Rochester (United States)
Leonid Tsybeskov, Univ. of Rochester (United States)

Published in SPIE Proceedings Vol. 3283:
Physics and Simulation of Optoelectronic Devices VI
Marek Osinski; Peter Blood; Akira Ishibashi, Editor(s)

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