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Proceedings Paper

Heavy p-type doping of ZnSe-based II-VI semiconductors using an excimer laser
Author(s): Yoshinori Hatanaka; Toru Aoki; Madan Niraula; Y. Aoki; Yoichiro Nakanishi
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Paper Abstract

p-type doping of wide band gap II-VI semiconductors is a key technology to form the ohmic contact with metal electrodes in device fabrications. Using an alkaline metal compound such as K2S, Na2Se or Na2Te which contains dopant atoms, excimer laser doping experiments were carried out for ZnSe and CdTe. Influence of the electrical properties on this treatment was mainly measured by means of the Hall measurement. The resistivity of ZnSe drastically decreased from 105 to 10-2 Ohm cm and the value of hole carrier concentration increased up to 4.8 X 1019 cm-3. For CdTe also resistivity decreased from 105 to 10-1 Ohm cm. Formation of p-type ohmic contact in ZnSe p-n diode was also investigated.

Paper Details

Date Published: 7 July 1998
PDF: 8 pages
Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); doi: 10.1117/12.316725
Show Author Affiliations
Yoshinori Hatanaka, Shizuoka Univ. (Japan)
Toru Aoki, Shizuoka Univ. (Japan)
Madan Niraula, Shizuoka Univ. (Japan)
Y. Aoki, Shizuoka Univ. (Japan)
Yoichiro Nakanishi, Shizuoka Univ. (Japan)

Published in SPIE Proceedings Vol. 3283:
Physics and Simulation of Optoelectronic Devices VI
Marek Osinski; Peter Blood; Akira Ishibashi, Editor(s)

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