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Proceedings Paper

Polarization anisotropy in ordered GaInP optoelectronic devices
Author(s): Erik Greger; T. Kippenberg; Peter Kiesel; Michael Moser; Karlheinz H. Gulden; Gottfried H. Doehler
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Paper Abstract

GaInP is a very important material for opto-electronic components operating in the visible spectra range ((lambda) equals 630...690 nm). Depending on MOVPE growth conditions, spontaneous ordering occurs which is established in form of a monoatomic superlattice arrangement of the group III components in {111}B planes. The reduced symmetry in ordered crystals leads to a polarization anisotropy of the absorption coefficient, which was investigated with transmission experiments. The polarization anisotropy was utilized to realize polarization threshold switches and polarization detectors. The polarization threshold switches consist of a n-i-p photodiode with an intrinsically integrated junction field-effect-transistor amplifier. The polarization anisotropy of the ordered GaInP absorption layer results in a polarization dependent source- gate photocurrent. This finally determines the working point of the device and yields in a very sensitive control of the source-drain conductivity GSD by the polarization of the incident light. First measurements reveal a switching contrast of 50 dB between light linearly polarized along the [011] and [01-1] crystal direction, respectively.

Paper Details

Date Published: 7 July 1998
PDF: 9 pages
Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); doi: 10.1117/12.316718
Show Author Affiliations
Erik Greger, Ctr. Suisse d'Electronique et de Microtechnique S.A./Zurich (Switzerland)
T. Kippenberg, Institut fuer Technische Physik I (Germany)
Peter Kiesel, Institut fuer Technische Physik I (Germany)
Michael Moser, Ctr. Suisse d'Electronique et de Microtechnique S.A./Zurich (Switzerland)
Karlheinz H. Gulden, Ctr. Suisse d'Electronique et de Microtechnique S.A./Zurich (Switzerland)
Gottfried H. Doehler, Institut fuer Technische Physik I (Germany)


Published in SPIE Proceedings Vol. 3283:
Physics and Simulation of Optoelectronic Devices VI
Marek Osinski; Peter Blood; Akira Ishibashi, Editor(s)

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