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Proceedings Paper

AlGaN/GaN intersubband transitions for Tb/s 1.55-um optical switches
Author(s): Nobuo Suzuki; Norio Iizuka
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Paper Abstract

The feasibility of the inter-subband transition (ISBT) in Al(Ga)N/GaN quantum wells (QWs) as a device mechanism for ultrafast optical switches is theoretically investigated. The 1.55-micrometers ISBT is shown to be feasible because of its large conduction band discontinuity. The inter-subband relaxation time at 1.55 micrometers is estimated to be about 100 fs, which is 20 - 30 times shorter than that in InGaAs QWs. A large electron-electron scattering rate causes a short dephasing time (about 10 fs), which reduces the peak value of the third-order nonlinear susceptibility. At a high carrier density, however, the dephasing time is increased because of the screening and the exclusion, which enhances the nonlinear susceptibility. Ultrafast relaxation of the inter-subband optical nonlinearity in GaN QWs is little affected by the delay in intra-subband energy relaxation caused by non-equilibrium phonons. These characteristics suggest that the ISBT in nitride QWs is a promising mechanism for multi-terabit/s optical switches.

Paper Details

Date Published: 7 July 1998
PDF: 8 pages
Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); doi: 10.1117/12.316712
Show Author Affiliations
Nobuo Suzuki, Toshiba Corp. (Japan)
Norio Iizuka, Toshiba Corp. (Japan)

Published in SPIE Proceedings Vol. 3283:
Physics and Simulation of Optoelectronic Devices VI
Marek Osinski; Peter Blood; Akira Ishibashi, Editor(s)

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