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Proceedings Paper

Ultrafast spin relaxation in quantum-confined structures for all-optical switching
Author(s): Osamu Wada; Atsushi Tackeuchi; Yuji Nishikawa; Tetsuya Nishimura
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Paper Abstract

Electron-spin relaxation has been investigated in a variety of quantum confined structures including GaAs-based quantum wells and quantum wires as well as InP-based quantum wells, and it has been shown to exhibit ultrafast relaxation in the picosecond, and even in the femtosecond, range. This ultrafast relaxation has been used together with the exciton absorption nonlinearity as an novel principle of all-optical switching device which can avoid the speed limit due to the slow carrier lifetime in conventional switching devices. Experiments on GaAs-based quantum-well spin switches have shown 4-ps gate switch operation. Also, experimental analyses have shown the feasibility of these devices at a high contrast ratio (13 dB) and high repetition rate (40 GHz). The application of this device to a demultiplexer has been proposed.

Paper Details

Date Published: 7 July 1998
PDF: 12 pages
Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); doi: 10.1117/12.316711
Show Author Affiliations
Osamu Wada, Femtosecond Technology Research Association (Japan)
Atsushi Tackeuchi, Waseda Univ. (Japan)
Yuji Nishikawa, Fujitsu Labs. Ltd. (Japan)
Tetsuya Nishimura, Femtosecond Technology Research Association (Japan)


Published in SPIE Proceedings Vol. 3283:
Physics and Simulation of Optoelectronic Devices VI
Marek Osinski; Peter Blood; Akira Ishibashi, Editor(s)

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