Share Email Print

Proceedings Paper

Deep defect center characteristics of wide-bandgap II-VI and III-V blue laser materials
Author(s): Koshi Ando; Tsutomu Yamaguchi; Keiichi Koizumi; Yoshihiro Okuno; Tomoki Abe; Hirohumi Kasada; Akira Ishibashi; Kazushi Nakano; Shuji Nakamura
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Microscopic deep defect characteristics of the blue laser materials in the II-VI and III-V wide-bandgap semiconductors have been studied from the view point of the device performance and degradation. The deep defect centers, monitored by transient capacitance spectroscopy technique, have revealed quite different properties in electrical activity, defect density and carrier injection enhanced generation of the defects for the two different wide-bandgap blue laser materials.

Paper Details

Date Published: 7 July 1998
PDF: 9 pages
Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); doi: 10.1117/12.316704
Show Author Affiliations
Koshi Ando, Tottori Univ. (Japan)
Tsutomu Yamaguchi, Tottori Univ. (Japan)
Keiichi Koizumi, Tottori Univ. (Japan)
Yoshihiro Okuno, Tottori Univ. (Japan)
Tomoki Abe, Tottori Univ. (Japan)
Hirohumi Kasada, Tottori Univ. (Japan)
Akira Ishibashi, Sony Corp. Research Ctr. (Japan)
Kazushi Nakano, Sony Corp. Research Ctr. (Japan)
Shuji Nakamura, Nichia Chemical Industries, Ltd. (United States)

Published in SPIE Proceedings Vol. 3283:
Physics and Simulation of Optoelectronic Devices VI
Marek Osinski; Peter Blood; Akira Ishibashi, Editor(s)

© SPIE. Terms of Use
Back to Top