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Proceedings Paper

Influence of high probe power on multiwave mixing characteristics of semiconductor lasers
Author(s): J. M. Tang; Keith Alan Shore
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Paper Abstract

Nearly degenerate four-wave mixing in above-threshold laser diodes with symmetric or asymmetric facet reflectivities, subject to strong probe injection power, is investigated theoretically, taking into account the effects of pump depletion, carrier diffusion, gain saturation, gain compression, total power dependence of the gain and coupling coefficients as well as the longitudinal dependence of the nonlinear interaction. It is shown that the pump depletion effect plays an important role for strong input probe power. The reflectivity efficiencies of probe and conjugate wave demonstrate significantly different behaviors for strong probe injection power case, and a greater than approximately 3 dB enhancement of reflectivity efficiencies can be achieved in an asymmetric laser diode, compared to a symmetric laser.

Paper Details

Date Published: 7 July 1998
PDF: 11 pages
Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); doi: 10.1117/12.316697
Show Author Affiliations
J. M. Tang, Univ. of Wales/Bangor (United Kingdom)
Keith Alan Shore, Univ. of Wales/Bangor (United Kingdom)


Published in SPIE Proceedings Vol. 3283:
Physics and Simulation of Optoelectronic Devices VI
Marek Osinski; Peter Blood; Akira Ishibashi, Editor(s)

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