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Proceedings Paper

Operation of a novel hot-electron vertical-cavity surface-emitting laser
Author(s): Naci Balkan; Angela O'Brien-Davies; A. Boland Thoms; Richard J. Potter; Nigel Poolton; Michael J. Adams; J. Masum; Alpan Bek; Ali Serpenguzel; Atilla Aydinli; John Stuart Roberts
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Paper Abstract

The hot Electron Light Emission and Lasing in Semiconductor Heterostructures devices (HELLISH-1) is novel surface emitter consisting of a GaAs quantum well, within the depletion region, on the n side of Ga1-xAlxAs p- n junction. It utilizes hot electron transport parallel to the layers and injection of hot electron hole pairs into the quantum well through a combination of mechanisms including tunnelling, thermionic emission and diffusion of `lucky' carriers. Super Radiant HELLISH-1 is an advanced structure incorporating a lower distributed Bragg reflector (DBR). Combined with the finite reflectivity of the upper semiconductor-air interface reflectivity it defines a quasi- resonant cavity enabling emission output from the top surface with a higher spectral purity. The output power has increased by two orders of magnitude and reduced the full width at half maximum (FWHM) to 20 nm. An upper DBR added to the structure defines HELLISH-VCSEL which is currently the first operational hot electron surface emitting laser and lases at room temperature with a 1.5 nm FWHM. In this work we demonstrate and compare the operation of UB-HELLISH-1 and HELLISH-VCSEL using experimental and theoretical reflectivity spectra over an extensive temperature range.

Paper Details

Date Published: 7 July 1998
PDF: 9 pages
Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); doi: 10.1117/12.316680
Show Author Affiliations
Naci Balkan, Univ. of Essex (United Kingdom)
Angela O'Brien-Davies, Univ. of Essex (United Kingdom)
A. Boland Thoms, Univ. of Essex (United Kingdom)
Richard J. Potter, Univ. of Essex (United Kingdom)
Nigel Poolton, Univ. of Essex (United Kingdom)
Michael J. Adams, Univ. of Essex (United Kingdom)
J. Masum, Univ. of Essex (United Kingdom)
Alpan Bek, Bilkent Univ. (Turkey)
Ali Serpenguzel, Bilkent Univ. (Turkey)
Atilla Aydinli, Bilkent Univ. (United States)
John Stuart Roberts, Univ. of Sheffield (United Kingdom)


Published in SPIE Proceedings Vol. 3283:
Physics and Simulation of Optoelectronic Devices VI
Marek Osinski; Peter Blood; Akira Ishibashi, Editor(s)

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