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Proceedings Paper

Quantum-dot active regions for extended-wavelength-range GaAs-based light-emitting devices
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Paper Abstract

This paper describes crystal growth techniques for achieving good electroluminescence efficiency and narrow linewidth from a GaAs-based light emitting device emitting at 1.3 micrometers . The long wavelength emission is achieved using a quantum dot active region grown by sub-monolayer In, Ga and As. Low threshold lasing at a shorter wavelength of 1.15 micrometers is achieved in a GaAs-based oxide-confined vertical- cavity laser using alternating single monolayer growth of InAs/GaAs QDs.

Paper Details

Date Published: 7 July 1998
PDF: 8 pages
Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); doi: 10.1117/12.316678
Show Author Affiliations
Diana L. Huffaker, The Univ. of Texas at Austin (United States)
Jeremy D. Schaub, The Univ. of Texas at Austin (United States)
Hongyu Deng, The Univ. of Texas at Austin (United States)
Dennis G. Deppe, The Univ. of Texas at Austin (United States)


Published in SPIE Proceedings Vol. 3283:
Physics and Simulation of Optoelectronic Devices VI
Marek Osinski; Peter Blood; Akira Ishibashi, Editor(s)

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