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Proceedings Paper

ZnSe-based light emitters grown on wide-gap III-V buffer layers
Author(s): Petteri Uusimaa; Arto K. Salokatve; Pekka Savolainen; A. Rinta-Moykky; Markus Pessa; A. Souifi; R. Adhiri; George Kiriakidis; K. Moschovis; J. Stoimenos
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Paper Abstract

ZnSe-based laser diodes have recently encountered strong competition from those grown from GaN related materials. These two material systems behave in a very different way as far as defect generation and propagation are concerned. For ZnSe-based materials the lifetime of a laser-diode is very sensitive to the density of pre-existing extended defects in the epitaxial material. Therefore, fabrication of a long- lived ZnSe-based laser diode requires an elimination of extended defects as well as making low-resistivity components in order to minimize device heating. We discuss the molecular beam epitaxy growth and characterization of ZnSe-based epitaxial structures on various III-V buffer layers lattice matched to GaAs. The status of our ZnSe-based laser diodes and microcavity LEDs will also be discussed.

Paper Details

Date Published: 7 July 1998
PDF: 12 pages
Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); doi: 10.1117/12.316674
Show Author Affiliations
Petteri Uusimaa, Tampere Univ. of Technology (Finland)
Arto K. Salokatve, Tampere Univ. of Technology (Finland)
Pekka Savolainen, Tampere Univ. of Technology (Finland)
A. Rinta-Moykky, Tampere Univ. of Technology (Finland)
Markus Pessa, Tampere Univ. of Technology (Finland)
A. Souifi, Institut National des Sciences Appliquees de Lyon (France)
R. Adhiri, Institut National des Sciences Appliquees de Lyon (France)
George Kiriakidis, Institute of Electronic Structure and Laser/Foundation for Research and Technology-Hellas (Greece)
K. Moschovis, Institute of Electronic Structure and Laser/Foundation for Research and Technology-Hellas (Greece)
J. Stoimenos, Univ. of Thessaloniki (Greece)


Published in SPIE Proceedings Vol. 3283:
Physics and Simulation of Optoelectronic Devices VI
Marek Osinski; Peter Blood; Akira Ishibashi, Editor(s)

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