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Proceedings Paper

Three-cation intermixed InGaAs/InAlAs quantum well structures and their optical gain properties
Author(s): Y. Chan; Michael C. Y. Chan; E. Herbert Li
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Paper Abstract

Multiple cations intermixed In0.53Ga0.47As/In0.52Al0.48As quantum well structure with 60 angstroms well width is investigated by using the expanded form of Fick's second law. It was found that a maximum compressive strain of 0.64% is obtained when annealing time reaches 3 hours at 812 degree(s)C in the indium sublattice. For a small interdiffusion, i.e. 1 to 1.5 hrs, the subband separation between the lowest heavy and light hole states is at its greatest. This is a major contribution to the band structure and averaged density of states, thus enhancement in optical gain up to 40% is obtained. For a large interdiffusion, i.e. up to 6 hrs, a large blue shift of the peak gain from 0.842 to 1.016 eV is observed.

Paper Details

Date Published: 7 July 1998
PDF: 8 pages
Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); doi: 10.1117/12.316669
Show Author Affiliations
Y. Chan, Univ. of Hong Kong (Hong Kong)
Michael C. Y. Chan, Univ. of Hong Kong (Hong Kong)
E. Herbert Li, Univ. of Hong Kong (United States)


Published in SPIE Proceedings Vol. 3283:
Physics and Simulation of Optoelectronic Devices VI
Marek Osinski; Peter Blood; Akira Ishibashi, Editor(s)

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