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Proceedings Paper

Bandgap renormalization: GaAs/AlGaAs quantum wells
Author(s): Eric D. Jones; Mark Blount; Weng W. Chow; Hong Q. Hou; Jerry A. Simmons; Yongmin Kim; Thomas Schmiedel
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Paper Abstract

Bandgap energy renormalization by many-body interactions has been studied in a series of n-type 8-nm-wide GaAs/AlGaAs single quantum wells using magnetoluminescence spectroscopy at 1.4 K and for magnetic fields up to 30 T. The 2D-carrier densities varied between 1 and 12 X 1011 cm-2. At the maximum 2D-carrier density, the bandgap energy difference between the doped and undoped samples was about 34 meV.

Paper Details

Date Published: 7 July 1998
PDF: 7 pages
Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); doi: 10.1117/12.316668
Show Author Affiliations
Eric D. Jones, Sandia National Labs. (United States)
Mark Blount, Sandia National Labs. (United States)
Weng W. Chow, Sandia National Labs. (United States)
Hong Q. Hou, Sandia National Labs. (United States)
Jerry A. Simmons, Sandia National Labs. (United States)
Yongmin Kim, Los Alamos National Lab. (United States)
Thomas Schmiedel, Florida State Univ. (United States)

Published in SPIE Proceedings Vol. 3283:
Physics and Simulation of Optoelectronic Devices VI
Marek Osinski; Peter Blood; Akira Ishibashi, Editor(s)

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