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Proceedings Paper

InGaN-based laser diodes with an estimated lifetime of longer than 10,000 hours
Author(s): Shuji Nakamura
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Paper Abstract

InGaN multi-quantum-well structure laser diodes with Al0.14Ga0.86N/GaN modulation doped strained-layer superlattice cladding layers grown on an epitaxially laterally overgrown GaN substrate were demonstrated to have an estimated lifetime of longer than 10,000 hours under continuous-wave operation at 20 degree(s)C. The activation energy of the lifetime was estimated to be 0.5 eV. With the operating current increasing above the threshold, a self- pulsation with a high frequency of 3.5 GHz was observed.

Paper Details

Date Published: 7 July 1998
PDF: 12 pages
Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); doi: 10.1117/12.316666
Show Author Affiliations
Shuji Nakamura, Nichia Chemical Industries, Ltd. (United States)


Published in SPIE Proceedings Vol. 3283:
Physics and Simulation of Optoelectronic Devices VI
Marek Osinski; Peter Blood; Akira Ishibashi, Editor(s)

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