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Proceedings Paper

Optimal refractive index changes for cross-gain and cross-phase modulation
Author(s): Thomas Keating; Jeffrey R. Minch; Seoung-Hwan Park; Shun-Lien Chuang; Tawee Tanbun-Ek
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Paper Abstract

We present a systematic characterization of the gain, refractive index, and linewidth enhancement factor in a semiconductor laser and a semiconductor optical amplifier. We compare the refractive index shift and linewidth enhancement factor due to electrical pumping alone and then with electrical and optical pumping. Changes in carrier density are estimated throughout with a many-body optical gain model taking into account the valance-band mixing. The spectral characteristics of the refractive index shift show potentially ideal conditions for broadband cross-phase modulation. Further measurements of the refractive index shift and linewidth enhancement factor in a semiconductor optical amplifier show operating conditions under which the refractive index shift and linewidth enhancement factor change sign, revealing potentially ideal conditions for cross gain modulation.

Paper Details

Date Published: 7 July 1998
PDF: 9 pages
Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); doi: 10.1117/12.316662
Show Author Affiliations
Thomas Keating, Univ. of Illinois/Urbana-Champaign (United States)
Jeffrey R. Minch, Univ. of Illinois/Urbana-Champaign (United States)
Seoung-Hwan Park, Univ. of Illinois/Urbana-Champaign (United States)
Shun-Lien Chuang, Univ. of Illinois/Urbana-Champaign (United States)
Tawee Tanbun-Ek, Lucent Technologies/Bell Labs. (United States)


Published in SPIE Proceedings Vol. 3283:
Physics and Simulation of Optoelectronic Devices VI
Marek Osinski; Peter Blood; Akira Ishibashi, Editor(s)

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