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Proceedings Paper

Comprehensive model of high-power diode laser amplifiers
Author(s): Zheng Dai
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Paper Abstract

A comprehensive model is presented to investigate optical, electrical, and thermal behaviors of large-area high-power diode laser amplifiers. The resistor network model describing lateral current confinement is used to define waveguide structures. Spatial variation of current injection is taken into account through junction voltage variations. Hole burnings on gain coefficient and junction voltage are calculated from a 1D carrier diffusion equation. To study thermal lensing, the finite element thermal analysis is integrated into the electric model and the beam propagation method. The described distributed electric/thermal model result in some new explanations in thermal lensing and beam filamentation.

Paper Details

Date Published: 7 July 1998
PDF: 12 pages
Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); doi: 10.1117/12.316656
Show Author Affiliations
Zheng Dai, Nanyang Technological Univ. (Singapore)


Published in SPIE Proceedings Vol. 3283:
Physics and Simulation of Optoelectronic Devices VI
Marek Osinski; Peter Blood; Akira Ishibashi, Editor(s)

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