Share Email Print

Proceedings Paper

Structural analysis of prechirping InGaAsP bulk electroabsorption modulator considering the effective chirp parameter
Author(s): Byeong-Gee Kim; Young-Wan Choi
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We present the structural analysis of prechirping bulk electroabsorption modulators (EAM's) considering the effective chirp parameter ((alpha) eff). For an accurate estimation of (alpha) eff, we propose a novel method that uses the modulator output intensity as a weighting factor. The transmission characteristics using (alpha) eff obtained by the simple method have an excellent agreement with those obtained by a simulation using the dynamic small- signal chirp parameters. With this method, we perform the structural analysis of the prechirping InGaAsP bulk EAM's varying the device structures and operating conditions in terms of power penalty. From the simulation results, the relations between (alpha) eff and power penalty is found out for the InGaAsP bulk EAM's.

Paper Details

Date Published: 7 July 1998
PDF: 8 pages
Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); doi: 10.1117/12.316653
Show Author Affiliations
Byeong-Gee Kim, Chung-Ang Univ. (South Korea)
Young-Wan Choi, Chung-Ang Univ. (South Korea)

Published in SPIE Proceedings Vol. 3283:
Physics and Simulation of Optoelectronic Devices VI
Marek Osinski; Peter Blood; Akira Ishibashi, Editor(s)

© SPIE. Terms of Use
Back to Top