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Proceedings Paper

Modeling of wide-area thin-film metal-semiconductor-metal photodetectors for LIDAR applications
Author(s): Andreas P. Glinz; Charles B. Morrison; Zheng Zhu
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Paper Abstract

We report calculations of the collection current of interdigitated InGaAs metal-semiconductor-metal photodetectors. We show how interdigital spacing and thickness of the semiconductor layer influence the collection current. Both front and back illumination of devices carried on thin film membranes by means of epitaxial liftoff are examined.

Paper Details

Date Published: 7 July 1998
PDF: 7 pages
Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); doi: 10.1117/12.316651
Show Author Affiliations
Andreas P. Glinz, TACAN Corp. (United States)
Charles B. Morrison, TACAN Corp. (United States)
Zheng Zhu, TACAN Corp. (United States)

Published in SPIE Proceedings Vol. 3283:
Physics and Simulation of Optoelectronic Devices VI
Marek Osinski; Peter Blood; Akira Ishibashi, Editor(s)

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