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Proceedings Paper

Many-body effects in the gain spectra of GaN/AlGaN quantum wells with localized states
Author(s): Takeshi Uenoyama
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Paper Abstract

We have evaluated the optical gain of GaN/AlGaN quantum well structures with localized states, taking into account the Coulomb interaction. The localized states are introduced in the well as quantum dot-like subband states. We have used the temperature Green's function formalism to treat the many-body effects and have found a new excitonic enhancement of the optical gain involved the localized states. This enhancement is stronger than the conventional Coulomb enhancement. It might play an important role to reduce the threshold carrier density.

Paper Details

Date Published: 7 July 1998
PDF: 9 pages
Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); doi: 10.1117/12.316650
Show Author Affiliations
Takeshi Uenoyama, Matsushita Electric Industrial Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 3283:
Physics and Simulation of Optoelectronic Devices VI
Marek Osinski; Peter Blood; Akira Ishibashi, Editor(s)

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