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Proceedings Paper

Effect of carrier dynamics on quantum-dot laser performance and the possibility of bi-exciton lasing
Author(s): Mitsuru Sugawara
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Paper Abstract

The purpose of this work is to study the effect of carrier dynamics on quantum-dot laser performance and to clarify how the carrier relaxation lifetime and the bi-exciton effect manifest themselves in the quantum-dot laser operation. We derive carrier-photon rate equations for quantum-dot lasers and simulate the output power vs. injected current relationship and the small-signal modulation response. We clarify criteria on the carrier relaxation lifetime as well as the inhomogeneous broadening linewidth, the dot density and the crystal quality to achieve high-performance. Then, we develop an optical gain formula for the bi-exciton- exciton transition and modify rate equations to describe bi- exciton lasing in quantum dots. We show spontaneous emission and lasing properties of bi-excitons, and discuss the effect of carrier relaxation lifetime and oscillator strength on the laser operations.

Paper Details

Date Published: 7 July 1998
PDF: 12 pages
Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); doi: 10.1117/12.316640
Show Author Affiliations
Mitsuru Sugawara, Fujitsu Labs. Ltd. (Japan)

Published in SPIE Proceedings Vol. 3283:
Physics and Simulation of Optoelectronic Devices VI
Marek Osinski; Peter Blood; Akira Ishibashi, Editor(s)

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