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Proceedings Paper

Asymmetric multiple quantum well lasers and amplifiers
Author(s): Sergei V. Nalivko; Valerii K. Kononenko; Ivan S. Manak; Victor A. Shevtzov
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Paper Abstract

Band engineering conception of asymmetric quantum-well (QW) heterostructures widens possibilities to control functional performances of semiconductors lasers and other semiconductor optoelectronic devices. We have analyzed a new type of laser diodes and amplitudes based on asymmetric multiple-QW heterostructures having active layers of different thicknesses and component compositions. For such QW systems, it is possible to change the optical gain spectrum in a wide range and to control the set of definite amplification frequencies due to selecting the width, component composition, and doping of QW and barrier regions.

Paper Details

Date Published: 14 July 1998
PDF: 3 pages
Proc. SPIE 3423, Second GR-I International Conference on New Laser Technologies and Applications, (14 July 1998); doi: 10.1117/12.316563
Show Author Affiliations
Sergei V. Nalivko, Belorussian State Univ. (Belarus)
Valerii K. Kononenko, Belorussian State Univ. (Belarus)
Ivan S. Manak, Belorussian State Univ. (Belarus)
Victor A. Shevtzov, Belorussian State Univ. (Belarus)


Published in SPIE Proceedings Vol. 3423:
Second GR-I International Conference on New Laser Technologies and Applications
Alexis Carabelas; Paolo Di Lazzaro; Amalia Torre; Giuseppe Baldacchini, Editor(s)

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