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Proceedings Paper

How to get light out of silicon: molecular design of precursors for MOCVD of Si:Er
Author(s): William S. Rees; Oliver Just; Lionel C. Kimerling; Michael T. Morse
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Paper Abstract

Erbium {tris[bis(trimethylsilyl)]amide} has been employed as a dopant material for incorporation of the rare earth element erbium into a silicon host lattice for fabrication of monochromatic and temperature-independent optoelectronic devices. Electronic characteristics, including room temperature electroluminescence and glancing angle X-ray diffraction, have been obtained from deposited Si:Er films. The utilized erbium amide precursor has been compared to alternative erbium sources as hydrocarbon and fluorocarbon containing (beta) -diketonates (tmhd and fod).

Paper Details

Date Published: 6 July 1998
PDF: 6 pages
Proc. SPIE 3469, Organic-Inorganic Hybrid Materials for Photonics, (6 July 1998); doi: 10.1117/12.312904
Show Author Affiliations
William S. Rees, Georgia Institute of Technology (United States)
Oliver Just, Georgia Institute of Technology (United States)
Lionel C. Kimerling, Massachusetts Institute of Technology (United States)
Michael T. Morse, Massachusetts Institute of Technology (United States)

Published in SPIE Proceedings Vol. 3469:
Organic-Inorganic Hybrid Materials for Photonics
Liliane G. Hubert-Pfalzgraf; S. Iraj Najafi, Editor(s)

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