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Proceedings Paper

Optical studies of the internal electric field distributions, crystal defects, and detector performance of CdZnTe radiation detectors
Author(s): H. Walter Yao; Ralph B. James; Edwin Y. Lee; Richard W. Olsen; Haim Hermon; Robert J. Anderson
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Paper Abstract

Polarized transmission optical profiles were employed to characterize the CdZnTe (CZT) room-temperature radiation detectors. 2D images reflecting the internal electric field intensity changes were obtained utilizing the Pockels electro-optic effect. Varieties of different types of CZT detectors, i.e., planar and P-I-N detectors, were investigated under different operating bias voltages, respectively. Single crystal and polycrystalline CZT detectors were also studied and compared. Nonuniform internal electric field distributions throughout the detector volumes were observed and analyzed. The grain- boundary effects to the internal electric fields will be presented and discussed, along with a theoretical simulation. A semiconductor energy band model associated with depletion layer width will be emphasized and discussed.

Paper Details

Date Published: 1 July 1998
PDF: 10 pages
Proc. SPIE 3446, Hard X-Ray and Gamma-Ray Detector Physics and Applications, (1 July 1998); doi: 10.1117/12.312889
Show Author Affiliations
H. Walter Yao, Univ. of Nebraska/Lincoln and Sandia National Labs. (United States)
Ralph B. James, Sandia National Labs. (United States)
Edwin Y. Lee, Sandia National Labs. (United States)
Richard W. Olsen, Sandia National Labs. (United States)
Haim Hermon, Sandia National Labs. (Israel)
Robert J. Anderson, Sandia National Labs. (United States)


Published in SPIE Proceedings Vol. 3446:
Hard X-Ray and Gamma-Ray Detector Physics and Applications
F. Patrick Doty; Richard B. Hoover, Editor(s)

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